They argue that the density dependent metal-insulator transition seen in Silicon MOSFETs and other two dimensional electron gases (2DEGs) in semiconductor heterostructures is not driven by disorder (which has been claimed for many years) but rather by electronic correlations. Furthermore, the relevant experimental data can be described by a Dynamical Mean-Field Theory (DMFT) treatment of the Wigner-Mott transition in an extended Hubbard model on a lattice.
This means that the non-monotonic temperature dependence of the resistivity is associated with the crossover from a Fermi liquid at low temperatures to a bad metal at higher temperatures. I think thermopower measurements may be the most effective way to test this claim (see the previous post).
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Thanks for the kind words Ross. As to thermopower, very recent data by A. Mokashi, S. Li, Bo Wen, S. V. Kravchenko, A. A. Shashkin, V. T. Dolgopolov, M. P. Sarachik, in the preprint entitled "Divergence of the effective mass in a strongly-interacting 2D electron system" (arXiv:1111.7238v1) indeed shows results consistent with what we proposed.
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