- Boron tends to form three centre two electron bonds.
- It contains 320 atoms per hexagonal unit cell! 6 out of 20 crystallographic sites are only partially occupied.
- The defect formation energy is negative leading to macroscopic numbers of intrinsic defects.
- The occupancy of the defects can be described in terms of a generalised Ising spin model on an expanded Kagome lattice.
- This Ising model describes the geometrical frustration associated with the defects, and the residual entropy present at zero temperature.
I am curious as to whether there is any need to take into account quantum fluctuations.